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SIAA00DJ-T1-GE3

Part No SIAA00DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 20.1A/40A PPAK / N-Channel 25 V 20.1A (Ta), 40A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6
Datasheet
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Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 20.1A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds 1090 pF @ 12.5 V
FET Feature -
Power Dissipation (Max) 3.5W (Ta), 19.2W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6
Package / Case PowerPAK® SC-70-6
Base Product Number SIAA00
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1353921-SIAA00DJ-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIAA00DJ-T1-GE3 CAD Model

Description

The SIAA00DJ-T1-GE3 is an N-Channel MOSFET transistor from the TrenchFET® Gen IV series manufactured by Vishay Siliconix.

  • Package: PowerPAK® SC-70-6
  • Drain to Source Voltage: 25 V
  • Continuous Drain Current: 20.1A
  • On-Resistance: 5.6mOhm @ 15A and 10V
  • Gate Charge: 24 nC @ 10V
  • Power Dissipation: 3.5W
  • Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8732 $52.3920
140+ $0.7165 $100.3100
220+ $0.6941 $152.7020
300+ $0.6717 $201.5100
390+ $0.6493 $253.2270
520+ $0.5821 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 127,945 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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