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SIAA40DJ-T1-GE3

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	SIAA40DJ-T1-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Datasheet	SIAA40DJ-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Vishay Siliconix
Series	TrenchFET® Gen IV
Package	Tape & Reel
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	12.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 4.5 V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 20 V
Power Dissipation (Max)	19.2W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting	SMD (SMT)
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6
Base Product Number	SIAA40
Other Names	SIAA40DJ-T1-GE3DKR,742-SIAA40DJ-T1-GE3DKR,SIAA40DJ-T1-GE3DKR,SIAA40DJ-T1-GE3TR,SIAA40DJ-T1-GE3CT,742-SIAA40DJ-T1-GE3CT,SIAA40DJ-T1-GE3CT,742-SIAA40DJ-T1-GE3TR,SIAA40DJ-T1-GE3TR
Standard Package	3,000
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1277623-SIAA40DJ-T1-GE3
Ultra Librarian 3D Model	Ultra Librarian SIAA40DJ-T1-GE3 CAD Model

Alternative Products

Description

The SIAA40DJ-T1-GE3 is an N-Channel MOSFET manufactured by Vishay Siliconix.

Drain to Source Voltage: 40V
Continuous Drain Current: 30A (Tc)
Maximum On-Resistance: 12.5mOhm @ 5A, 10V
Gate Charge: 12 nC @ 4.5 V
Package: PowerPAK SC-70-6
Maximum Power Dissipation: 19.2W (Tc)
Temperature Range: -55°C ~ 150°C (TJ)
MSL Level: 1 (unlimited)
Popularity: Not specified

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