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SIB413DK-T1-GE3

Part No SIB413DK-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 75mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.63 nC @ 5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 357 pF @ 10 V
Power Dissipation (Max) 2.4W (Ta), 13W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SC-75-6
Package / Case PowerPAK® SC-75-6
Base Product Number SIB413
Other Names SIB413DK-T1-GE3CT,SIB413DKT1GE3,SIB413DK-T1-GE3DKR,SIB413DK-T1-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277551-SIB413DK-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIB413DK-T1-GE3 CAD Model

Description

The SIB413DK-T1-GE3 is a P-Channel MOSFET transistor from Vishay Siliconix's TrenchFET series, designed for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 20 V
  • Continuous Drain Current (Id): 9A (Tc) @ 25°C
  • Maximum On-Resistance (Rds On): 75mOhm @ 6.5A and 4.5V
  • Gate Charge (Qg): 7.63 nC @ 5V
  • Input Capacitance (Ciss): 357 pF @ 10V
  • Maximum Gate-Source Voltage (Vgs): ±12V
  • Mounting: surface-mount device (SMD)
  • Package: PowerPAK SC-75-6 package
  • Power Dissipation: up to 2.4W (Ta) or 13W (Tc)
  • Gate Threshold Voltage (Vgs(th)): 1.5V @ 250μA
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Status: obsolete
  • ECCN: EAR99
  • HTSUS: 8541.29.0095
  • REACH: REACH unaffected
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V and 4.5V

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