The SIB413DK-T1-GE3 is a P-Channel MOSFET transistor from Vishay Siliconix's TrenchFET series, designed for use in discrete semiconductor products.
- Drain to Source Voltage (Vdss): 20 V
- Continuous Drain Current (Id): 9A (Tc) @ 25°C
- Maximum On-Resistance (Rds On): 75mOhm @ 6.5A and 4.5V
- Gate Charge (Qg): 7.63 nC @ 5V
- Input Capacitance (Ciss): 357 pF @ 10V
- Maximum Gate-Source Voltage (Vgs): ±12V
- Mounting: surface-mount device (SMD)
- Package: PowerPAK SC-75-6 package
- Power Dissipation: up to 2.4W (Ta) or 13W (Tc)
- Gate Threshold Voltage (Vgs(th)): 1.5V @ 250μA
- Operating Temperature Range: -55°C to 150°C (TJ)
- Status: obsolete
- ECCN: EAR99
- HTSUS: 8541.29.0095
- REACH: REACH unaffected
- Drive Voltage (Max Rds On, Min Rds On): 2.5V and 4.5V