The SIB422EDK-T1-GE3 is an N-Channel MOSFET designed for use in discrete semiconductor products from Vishay.

• Features a PowerPAK SC-75-6L Single case/package
• Maximum power dissipation: 2.5W (Ta) or 13W (Tc)
• Drive voltage for the maximum Rds On: 1.5V
• Minimum Rds On requires a drive voltage of: 4.5V
• Drain-source breakdown voltage: 20V
• Maximum gate-source voltage: ±8V
• @ 25°C, the MOSFET can handle a continuous drain current of: 9A (Tc)
• Gate-source threshold voltage: 1V @ 250μA
• Maximum gate charge: 18nC @ 8V
• Maximum Rds On @ Id,Vgs: 30 mOhm @ 5A, 4.5V
• Comes in a reel - TR packaging
• Mounted using SMD (SMT) technology
• Temperature range for operating: -55°C to 150°C (TJ)
• Quantity per package: 3k pcs