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Same model may have multiple batches, images only for reference.
SIDR392DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIDR392DP-T1-GE3

Part No SIDR392DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIDR392DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 82A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.62mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 188 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 9530 pF @ 15 V
Power Dissipation (Max) 6.25W (Ta), 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8DC
Package / Case PowerPAK® SO-8
Base Product Number SIDR392
Other Names SIDR392DP-T1-GE3CT,SIDR392DP-T1-GE3TR,SIDR392DP-T1-GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277626-SIDR392DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIDR392DP-T1-GE3 CAD Model

Description

The Vishay SIDR392DP-T1-GE3 is an N-channel MOSFET transistor with a drain to source voltage of 30V and a continuous drain current of 82A (Ta), 100A (Tc).

  • Rds On (Max) @ Id, Vgs: 0.62mOhm @ 20A, 10V
  • Gate Charge: 188 nC @ 10 V
  • Package/Case: PowerPAK® SO-8
  • Mounting Technology: SMD (SMT)
  • Maximum Power Dissipation: 6.25W (Ta), 125W (Tc)
  • Temperature Range: -55°C ~ 150°C (TJ)
  • Supply and Demand Status: Sufficient

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Quantity Unit Price Ext. Price
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39+ $2.6094 $101.7666
60+ $2.5278 $151.6680
82+ $2.4463 $200.5966
106+ $2.3647 $250.6582
142+ $2.1201 $301.0542
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