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Same model may have multiple batches, images only for reference.
SIE832DF-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SIE832DF-T1-E3

Part No SIE832DF-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIE832DF-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 77 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3800 pF @ 20 V
Power Dissipation (Max) 5.2W (Ta), 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 10-PolarPAK® (S)
Package / Case 10-PolarPAK® (S)
Base Product Number SIE832
Other Names SIE832DF-T1-E3CT,SIE832DFT1E3,SIE832DF-T1-E3TR,SIE832DF-T1-E3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277565-SIE832DF-T1-E3
Ultra Librarian 3D Model Ultra Librarian SIE832DF-T1-E3 CAD Model

Description

The SIE832DF-T1-E3 is an electronic component manufactured by Vishay Siliconix.

  • Product: MOSFET
  • Maximum power dissipation: 5.2W
  • Maximum continuous drain current: 50A

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Quantity Unit Price Ext. Price
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55+ $2.1374 $117.5570
84+ $2.0705 $173.9220
116+ $2.0037 $232.4292
150+ $1.9369 $290.5350
200+ $1.7366 $347.3200
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Availability: 1,239 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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