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SIHA4N80E-GE3

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	SIHA4N80E-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Datasheet	SIHA4N80E-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Vishay Siliconix
Series	E
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	622 pF @ 100 V
Power Dissipation (Max)	69W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220 Full Pack
Package / Case	TO-220-3 Full Pack
Base Product Number	SIHA4
Standard Package	1,000
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1277718-SIHA4N80E-GE3
Ultra Librarian 3D Model	Ultra Librarian SIHA4N80E-GE3 CAD Model

Alternative Products

Description

The Vishay Siliconix SIHA4N80E-GE3 is an N-Channel MOSFET that has a drain to source voltage of 800V and a continuous drain current of 4.3A (Tc) at 25°C.

Drain to Source Voltage: 800V
Continuous Drain Current: 4.3A (Tc) @ 25°C
Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
Gate Charge: 32 nC @ 10 V
Mounting Technology: Through-Hole
Packaging: Tube
Case/Package: TO-220-3 Full Pack
Temperature Range of Operation: -55°C to 150°C (TJ)
ECCN: EAR99

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SIHG15N60E-GE3

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