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SIHB24N65EFT1-GE3

Part No SIHB24N65EFT1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL 650V / N-Channel 650 V 24A (Tc) 250W (Tc) Surface Mount TO-263 (D²Pak)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 156mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2774 pF @ 100 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 742-SIHB24N65EFT1-GE3CT,742-SIHB24N65EFT1-GE3DKR,742-SIHB24N65EFT1-GE3TR
Standard Package 800
Win Source Part Number 976450-SIHB24N65EFT1-GE3
Ultra Librarian 3D Model Ultra Librarian SIHB24N65EFT1-GE3 CAD Model

Description

The 976450-SIHB24N65EFT1-GE3 is an N-channel MOSFET transistor with a drain to source voltage of 650 V and a continuous drain current of 24A @ 25°C.

  • Manufacturer: Vishay Siliconix
  • Part Number: 976450-SIHB24N65EFT1-GE3
  • Type: N-channel MOSFET
  • Drain to Source Voltage: 650 V
  • Continuous Drain Current: 24A @ 25°C
  • Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V
  • Vgs (Max): ±30V
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2Pak)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • ECCN: EAR99

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