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SIHD5N50D-E3

Part No SIHD5N50D-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 325 pF @ 100 V
Power Dissipation (Max) 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SIHD5
Other Names SIHD5N50D-E3DKR,SIHD5N50D-E3DKRINACTIVE,SIHD5N50D-E3DKR,SIHD5N50D-E3TRINACTIVE,SIHD5N50D-E3CT,SIHD5N50D-E3CT,SIHD5N50D-E3TR,SIHD5N50D-E3TR
Standard Package 75
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277885-SIHD5N50D-E3
Ultra Librarian 3D Model Ultra Librarian SIHD5N50D-E3 CAD Model

Description

The Vishay Siliconix SIHD5N50D-E3 is an N-channel MOSFET transistor with a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 5.3A @ 25°C.

  • Maximum On-Resistance (Rds On): 1.5Ohm @ 2.5A and 10V gate-source voltage (Vgs)
  • Gate Threshold Voltage (Vgs(th)): 5V @ 250μA
  • Power Dissipation: 104W @ a case temperature (Tc) of 25°C
  • Package/Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Operating Temperature: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $10.1866 $50.9330
12+ $8.3583 $100.2996
19+ $8.0971 $153.8449
26+ $7.8359 $203.7334
34+ $7.5747 $257.5398
45+ $6.7911 $305.5995
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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