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SIHF10N40D-E3

Part No SIHF10N40D-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 400V 10A TO-220 FPAK
Datasheet
Sample
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 400V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 526pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 33W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220 Full Pack
Dimension TO-220-3 Full Pack
Win Source Part Number 1096417-SIHF10N40D-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIHF10N40D-E3 CAD Model

Description

The SIHF10N40D-E3 is a N-channel MOSFET transistor manufactured by Vishay.

  • Maximum Power Dissipation: 33W @ Tc
  • Continuous Drain Current @ 25°C: 10A
  • Drain-Source Breakdown Voltage: 400V
  • Package: TO-220 Full Pack
  • Mounting Type: through-hole technology
  • Market Status: currently active
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1220 $61.7100
130+ $0.9207 $119.6910
195+ $0.8919 $173.9205
270+ $0.8632 $233.0640
350+ $0.8344 $292.0400
465+ $0.7481 $347.8665
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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