The SIHFL110TR-BE3 is an N-Channel MOSFET (Metal Oxide) transistor from Vishay Siliconix.

• Manufacturer: Vishay Siliconix
• Technology: MOSFET (Metal Oxide)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
• Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
• Vgs(th) (Max) @ Id: 4V @ 250μA
• Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
• Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
• Vgs (Max): ±20V
• Temperature Range: -55°C ~ 150°C (TJ)
• Package: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223