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Same model may have multiple batches, images only for reference.
SIHG17N60D-E3 Real Image
Same model may have multiple batches, images only for reference.

SIHG17N60D-E3

Part No SIHG17N60D-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHG17N60D-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 340mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1780 pF @ 100 V
Power Dissipation (Max) 277.8W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Base Product Number SIHG17
Other Names SIHG17N60D-E3CT,SIHG17N60D-E3CT
Standard Package 500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277874-SIHG17N60D-E3
Ultra Librarian 3D Model Ultra Librarian SIHG17N60D-E3 CAD Model

Description

The Vishay Siliconix 1277874-SIHG17N60D-E3 is a transistor component with a limited supply.

  • Maximum Power Dissipation: 277.8W (Tc)
  • Mounting Type: Through-Hole
  • Technology: MOSFET (Metal Oxide)
  • FET Type: N-Channel
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 100 V

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