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SIHG25N40D-GE3

Part No SIHG25N40D-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 88 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1707 pF @ 100 V
Power Dissipation (Max) 278W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Base Product Number SIHG25
Standard Package 500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277896-SIHG25N40D-GE3
Ultra Librarian 3D Model Ultra Librarian SIHG25N40D-GE3 CAD Model

Description

The SIHG25N40D-GE3 is an N-Channel MOSFET transistor from Vishay Siliconix.

  • Drain to Source Voltage (Vdss): 400 V
  • Continuous Drain Current (Id): 25A (Tc)
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Power Dissipation (Max): 278W (Tc)
  • Mounting: Through Hole
  • Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V
  • Package: TO-247-3
  • Operating Temperature: -55°C to 150°C (TJ)
  • Compliance: ECCN regulations

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.0533 $58.0127
47+ $2.5053 $117.7491
72+ $2.4270 $174.7440
99+ $2.3487 $232.5213
128+ $2.2704 $290.6112
171+ $2.0356 $348.0876
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,568 pieces
In Stock: 784 pieces Factory Stock: 784 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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