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Same model may have multiple batches, images only for reference.
SIHG80N60EF-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHG80N60EF-GE3

Part No SIHG80N60EF-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 80A TO247AC / N-Channel 600 V 80A (Tc) 520W (Tc) Through Hole TO-247AC
Datasheet
SIHG80N60EF-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series EF
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 32mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 400 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 6600 pF @ 100 V
Power Dissipation (Max) 520W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Base Product Number SIHG80
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 25
Win Source Part Number 1060390-SIHG80N60EF-GE3
Ultra Librarian 3D Model Ultra Librarian SIHG80N60EF-GE3 CAD Model

Description

The SIHG80N60EF-GE3 is an N-channel MOSFET transistor manufactured by Vishay Siliconix.

  • Drain to Source Voltage: 600 V
  • Continuous Drain Current: 80A @ 25°C
  • Maximum Rds on: 32mOhm @ 40A and 10V
  • Gate Charge: 400 nC @ 10V
  • Input Capacitance: 6600 pF @ 100 V

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $23.0811 $69.2433
6+ $18.9383 $113.6298
9+ $18.3465 $165.1185
12+ $17.7547 $213.0564
15+ $17.1629 $257.4435
20+ $15.3874 $307.7480
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