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Same model may have multiple batches, images only for reference.
SIHH21N65EF-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHH21N65EF-T1-GE3

Part No SIHH21N65EF-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHH21N65EF-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 19.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 102 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2396 pF @ 100 V
Power Dissipation (Max) 156W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 8 x 8
Package / Case 8-PowerTDFN
Base Product Number SIHH21
Other Names SIHH21N65EF-T1-GE3DKR,SIHH21N65EF-T1-GE3CT,SIHH21N65EF-T1-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277925-SIHH21N65EF-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIHH21N65EF-T1-GE3 CAD Model

Description

The SIHH21N65EF-T1-GE3 is an N-channel MOSFET transistor from Vishay Siliconix.

  • Maximum Drain to Source Voltage: 650V
  • Continuous Drain Current: 19.8A (Tc)
  • Maximum Rds On: 180mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Maximum Power Dissipation: 156W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
  • Package: Tape and reel
  • Standard Package: 3,000
  • Mounting: SMD (SMT)
  • ECCN: EAR99

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