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Same model may have multiple batches, images only for reference.
SIJA52ADP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIJA52ADP-T1-GE3

Part No SIJA52ADP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIJA52ADP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 41.6A (Ta), 131A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.63mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 20 V
Power Dissipation (Max) 4.8W (Ta), 48W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIJA52
Other Names SIJA52ADP-T1-GE3TR,SIJA52ADP-T1-GE3CT,SIJA52ADP-T1-GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277632-SIJA52ADP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIJA52ADP-T1-GE3 CAD Model

Description

The SIJA52ADP-T1-GE3 is an N-Channel MOSFET manufactured by Vishay Siliconix.

  • Package: PowerPAK SO-8
  • Standard Package: 3,000
  • Maximum Drain to Source Voltage: 40 V
  • Continuous Drain Current: 41.6A (Ta), 131A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 1.63mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 20 V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Series: TrenchFET Gen IV
  • MSL Level: 1 (unlimited)
  • HTSUS: 8541.29.0095
  • Other Part Numbers: SIJA52ADP-T1-GE3TR, SIJA52ADP-T1-GE3CT, and SIJA52ADP-T1-GE3DKR

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