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SIRA18ADP-T1-E3

Part No SIRA18ADP-T1-E3
Manufacturer Vishay
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 190239-SIRA18ADP-T1-E3
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIRA18ADP-T1-E3 CAD Model

Description

The SIRA18ADP-T1-E3 is a Power MOSFET from Vishay Siliconix, designed for efficient power switching in various applications. It is an N-channel device housed in a PowerPAK® SO-8 package. The SIRA18ADP-T1-E3 utilizes Vishay's advanced TrenchFET® technology to achieve low on-resistance and fast switching speeds. This makes it suitable for applications where efficiency and space are critical.

Applications:

  • Synchronous Rectification in DC-DC Converters
  • Load Switching
  • Power Management in Portable Devices (e.g., Smartphones, Tablets, Laptops)
  • Battery Management Systems (BMS)
  • Motor Control Applications

Features:

  • Low On-Resistance (RDS(on)): Minimizes conduction losses, improving efficiency.
  • Fast Switching Speed: Reduces switching losses, increasing overall system efficiency.
  • Logic Level Gate Drive: Allows direct drive from microcontrollers and logic circuits.
  • TrenchFET® Power MOSFET Technology: Enables high cell density for ultra-low on-resistance.
  • PowerPAK® SO-8 Package: Compact footprint with excellent thermal performance.
  • RoHS Compliant: Environmentally friendly.

Benefits:

  • Increased System Efficiency: Low RDS(on) and fast switching contribute to reduced power losses.
  • Compact Design: The small PowerPAK SO-8 package allows for high-density board layouts.
  • Simplified Gate Drive: Logic-level gate drive simplifies the design of the gate drive circuitry.
  • Improved Thermal Performance: The PowerPAK SO-8 package offers efficient heat dissipation.
  • Enhanced Reliability: Robust design ensures stable operation in demanding applications.

Additional Details:

The SIRA18ADP-T1-E3 features a drain-source voltage (VDS) of 30V. The continuous drain current (ID) depends on the operating conditions and PCB layout. However, it typically ranges between 10A and 20A. The gate threshold voltage (VGS(th)) is designed for logic-level compatibility. This MOSFET is designed to operate over a temperature range of -55°C to +150°C. Its low on-resistance characteristics are particularly beneficial in battery-powered applications where efficiency is paramount. The device's fast switching characteristics make it suitable for high-frequency DC-DC converters and other power conversion applications. The PowerPAK SO-8 package allows for efficient heat dissipation and is designed for surface mounting and automated assembly, helping to reduce manufacturing costs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.3014 $64.8010
525+ $0.2484 $130.4100
810+ $0.2406 $194.8860
1,115+ $0.2328 $259.5720
1,440+ $0.2251 $324.1440
1,925+ $0.2018 $388.4650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,800 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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