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SIS444DN-T1-GE3

Part No SIS444DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 35A PPAK1212-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 102 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3065 pF @ 15 V
Power Dissipation (Max) 52W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Base Product Number SIS444
Standard Package 3,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 667344-SIS444DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIS444DN-T1-GE3 CAD Model

Description

The SIS444DN-T1-GE3 is an N-Channel MOSFET (Metal Oxide) transistor from Vishay.

  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 35A @ 25°C
  • Rds On (Max): 3.3mOhm @ 10A and 10V
  • Gate Charge (Qg): 102nC @ 10V
  • Mounting Type: Surface Mountable
  • Package: PowerPAK 1212-8
  • Temperature Range: -55°C to 150°C
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $8.3571 $50.1426
15+ $6.8572 $102.8580
23+ $6.6429 $152.7867
32+ $6.4286 $205.7152
41+ $6.2143 $254.7863
54+ $5.5714 $300.8556
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,937 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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