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SIS782DN-T1-GE3

Part No SIS782DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 16A PPAK1212-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1025 pF @ 15 V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 41W (Tc)
Temperature Range - Operating -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Base Product Number SIS782
Standard Package 3,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 667346-SIS782DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIS782DN-T1-GE3 CAD Model

Description

The SIS782DN-T1-GE3 is an N-channel MOSFET transistor with a built-in Schottky diode from Vishay.

  • Manufacturer: Vishay
  • Channel Type: N-channel
  • Mounting Type: Surface Mount
  • Package: Tape and Reel
  • Standard Package Quantity: 3,000 pcs
  • Drain-to-Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id) @ 25°C: 16A
  • On-Resistance (Rds On) @ 10A, 10V: 9.5mOhm
  • Gate Threshold Voltage (Vgs(th)) @ 250µA: 2.3V
  • Power Dissipation: 41W

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4366 $50.2090
280+ $0.3583 $100.3240
435+ $0.3471 $150.9885
600+ $0.3359 $201.5400
770+ $0.3247 $250.0190
1,035+ $0.2911 $301.2885
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,470 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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