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SISA18DN-T1-GE3

Name: SISA18DN-T1-GE3
Brand: Vishay
SKU: 805386
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	SISA18DN-T1-GE3
Manufacturer	Vishay
Catalog	FETs - Single
Description	MOSFET N-CH 30V 38.3A 1212-8
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Manufacturer	Vishay Siliconix
Packaging	Reel
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) at 25°C	38.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Maximum) at Id, Vgs	7.5mOhm at 10A, 10V
Vgs(th) (Maximum) at Id	2.4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	21.5nC at 10V
Maximum Vgs	+20V, -16V
Input Capacitance (Ciss) (Maximum) at Vds	1000pF at 15V
Power Dissipation (Maximum)	3.2W , 19.8W (Tc)
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	SMD
Supplier Device Package	PowerPAK 1212-8
Manufacturer Package	PowerPAK 1212-8
Manufacturer Pack Quantity	3,000
MSL Level	1 (Unlimited)
Popularity	Medium
Supply and Demand Status	Balance
Win Source Part Number	805386-SISA18DN-T1-GE3
Ultra Librarian 3D Model	Ultra Librarian SISA18DN-T1-GE3 CAD Model

Alternative Products

Description

The SISA18DN-T1-GE3 from Vishay Siliconix is an N-channel MOSFET designed for power applications. It has a drain-source voltage of 30V and a continuous drain current of 38.3A @ 25°C.

Transistor Type: MOSFET (N-Channel)
Drain-Source Voltage: 30V
Continuous Drain Current @ 25°C: 38.3A
Package: PowerPAK 1212-8
Mounting Type: Surface Mount
Power Dissipation: 3.2W
Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
165+	$0.3504	$57.8160
405+	$0.2875	$116.4375
625+	$0.2785	$174.0625
860+	$0.2696	$231.8560
1,110+	$0.2606	$289.2660
1,485+	$0.2335	$346.7475

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 2,920 pieces

MOQ: 165 pcs

Order Increment : 1 pcs

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