The Vishay TrenchFET® Gen IV transistor is a dual N-channel MOSFET array that is ideal for use in various electronic applications.

• Drain to Source Voltage: 25V
• Continuous Drain Current: 40A (Tc) or 60A (Tc) @ 25°C
• Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V
• Package: 8-PowerWDFN package
• Temperature Range: -55°C to 150°C (TJ)
• Packaging: Tape and reel
• Standard Package: 3,000