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Same model may have multiple batches, images only for reference.
SIZF918DT-T1-GE3
Same model may have multiple batches, images only for reference.

SIZF918DT-T1-GE3

Part No SIZF918DT-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIZF918DT-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel (TR)
FET Type 2 N-Channel (Dual), Schottky
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs 4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA, 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V, 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 15V, 2650pF @ 15V
Power - Max 3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-PowerWDFN
Supplier Device Package 8-PowerPair® (6x5)
Base Product Number SIZF918
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278496-SIZF918DT-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIZF918DT-T1-GE3 CAD Model

Description

The Vishay Siliconix SIZF918DT-T1-GE3 power MOSFET is a high-performance dual N-channel device that belongs to the TrenchFET Gen IV series from Vishay Siliconix.

  • Drain-Source Voltage: 30V
  • Continuous Drain Current: 23A @ 25°C
  • Maximum Rds On: 4mOhm @ 10A, 10V
  • Maximum Gate Charge: 22nC @ 10V
  • Maximum Vgs(th): 2.4V @ 250μA
  • Power Dissipation: 3.4W (Ta) and 26.6W (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0552 $58.0360
135+ $0.8659 $116.8965
210+ $0.8388 $176.1480
285+ $0.8117 $231.3345
370+ $0.7847 $290.3390
495+ $0.7035 $348.2325
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Availability: 11,966 pieces
MOQ: 55 pcs
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