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Same model may have multiple batches, images only for reference.
SQ4284EY-T1_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQ4284EY-T1_GE3

Part No SQ4284EY-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 40V 8A 8SOIC
Datasheet
SQ4284EY-T1_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 40V
Maximum Rds On at Id,Vgs 13.5 mOhm @ 7A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 2200pF @ 25V
Maximum Power Dissipation 3.9W
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1101709-SQ4284EY-T1_GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SQ4284EY-T1_GE3 CAD Model

Description

The Vishay FET is a high-performance electronic component used in various applications.

  • Type: Dual 2 N-Channel Logic Level Gate FET
  • Drain-Source Breakdown Voltage: 40V
  • Power Dissipation: 3.9W
  • Rds On @ Id, Vgs: 13.5 mOhm @ 7A, 10V
  • Input Capacitance: 2200pF @ 25V
  • Gate Charge: 45nC @ 10V
  • Mounting: 8-SO
  • Packaging: Reel - TR
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.0120 $50.3000
61+ $1.6509 $100.7049
94+ $1.5993 $150.3342
130+ $1.5477 $201.2010
168+ $1.4961 $251.3448
224+ $1.3414 $300.4736
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,000 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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