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SQ4483EY-T1_GE3

Part No SQ4483EY-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CHANNEL 30V 30A 8SOIC  /  P-Channel 30 V 30A (Tc) 7W (Tc) Surface Mount 8-SOIC
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 113 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 15 V
Power Dissipation (Max) 7W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number SQ4483
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SQ4483EY-T1_GE3TR,SQ4483EY-T1_GE3-ND,SQ4483EY-T1_GE3CT,SQ4483EY-T1_GE3DKR
Standard Package 2,500
Win Source Part Number 1092859-SQ4483EY-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQ4483EY-T1_GE3 CAD Model

Description

The SQ4483EY-T1_GE3 is a P-Channel MOSFET manufactured by Vishay Siliconix.

  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Standard Package: 2,500
  • Maximum Drain to Source Voltage: 30 V
  • Continuous Drain Current: 30A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V
  • Operating Temperature Range: between -55°C to 175°C (TJ)
  • Series: Automotive, AEC-Q101, TrenchFET series
  • MSL Level: 1 (unlimited)
  • HTSUS: 8541.29.0095

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