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Same model may have multiple batches, images only for reference.
SQD100N04_3M6T4GE3
Same model may have multiple batches, images only for reference.

SQD100N04_3M6T4GE3

Part No SQD100N04_3M6T4GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SQD100N04_3M6T4GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6700 pF @ 25 V
Power Dissipation (Max) 136W (Tc)
Temperature Range - Operating -55°C ~ 175°C
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SQD100
Other Names 742-SQD100N04_3M6T4GE3TR
Standard Package 2,500
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1277781-SQD100N04_3M6T4GE3
Ultra Librarian 3D Model Ultra Librarian SQD100N04_3M6T4GE3 CAD Model

Description

The Vishay Siliconix SQD100N04_3M6T4GE3 is a high-performance N-channel MOSFET transistor that is ideal for use in a wide range of electronic circuits.

  • Drain to Source Voltage (Vdss): 40 V
  • Continuous Drain Current (Id): 100A (Tc) @ 25°C
  • Maximum On-Resistance (Rds On): 3.6mOhm @ 20A and 10V
  • Gate Threshold Voltage (Vgs(th)): 3.5V @ 250μA
  • Power Dissipation: 136W (Tc)
  • Gate Charge (Qg): 105 nC @ 10V
  • Input Capacitance (Ciss): 6700 pF @ 25V
  • Maximum Gate-Source Voltage (Vgs): ±20V
  • Operating Temperature Range: -55°C to 175°C
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Standard Package: 2,500 transistors

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