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Same model may have multiple batches, images only for reference.
SQD50P08-28-T4_GE3
Same model may have multiple batches, images only for reference.

SQD50P08-28-T4_GE3

Part No SQD50P08-28-T4_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SQD50P08-28-T4_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 28mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6035 pF @ 25 V
Power Dissipation (Max) 136W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SQD50
Other Names 742-SQD50P08-28-T4_GE3TR
Standard Package 2,500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277786-SQD50P08-28-T4_GE3
Ultra Librarian 3D Model Ultra Librarian SQD50P08-28-T4_GE3 CAD Model

Description

The Vishay Siliconix 1277786-SQD50P08-28-T4_GE3 is a P-channel MOSFET transistor with a TO-252-3, DPak (2 leads + tab), SC-63 package.

  • Mounting Type: surface mount device (SMD)
  • Maximum Vgs: ±20V
  • Temperature Range: -55°C ~ 175°C (TJ)
  • Maximum Power Dissipation: 136W (Tc)
  • Series: automotive, AEC-Q101, TrenchFET®

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