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SQJ412EP-T1-GE3

Part No SQJ412EP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 1721+
Reference case SMD
Manufacturer Vishay
Manufacturer Homepage www.vishay.com
Win Source Part Number 720540-SQJ412EP-T1-GE3
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SQJ412EP-T1-GE3 CAD Model

Description

The SQJ412EP-T1-GE3 is an N-Channel MOSFET from Vishay. This device is designed for high-efficiency power switching and load switching applications. It combines low on-resistance and fast switching speeds in a compact package, making it suitable for use in a wide variety of power management applications.

Applications:

  • Synchronous Rectification: Used in synchronous rectification circuits in DC-DC converters.
  • Load Switching: Suitable for load switching in power distribution systems.
  • Power Management: Employed in power management circuits for portable devices and other electronic systems.
  • Motor Control: Can be used in low-power motor control applications.
  • Battery Management Systems (BMS): Used in BMS for switching and protection.

Features:

  • N-Channel MOSFET: Provides efficient switching characteristics.
  • Low On-Resistance (RDS(on)): Minimizes power loss and improves efficiency.
  • Fast Switching Speed: Reduces switching losses and enhances high-frequency performance.
  • TrenchFET® Power MOSFET Technology: Offers superior performance and efficiency.
  • 100% Rg Tested: Ensures consistent performance and reliability.
  • Halogen-Free: Environmentally friendly.
  • Thermally Enhanced PowerPAK® SO-8 Package: Improves heat dissipation.

Benefits:

  • High Efficiency: Low on-resistance minimizes power losses, resulting in higher efficiency.
  • Reduced Heat Dissipation: Thermally enhanced package facilitates effective heat dissipation.
  • Fast Switching: Enhances performance in high-frequency applications.
  • Compact Design: Small footprint enables miniaturization of electronic devices.
  • Improved Reliability: Robust construction ensures reliable performance in demanding environments.

Additional Details:

The SQJ412EP-T1-GE3 features a drain-source voltage (VDS) rating appropriate for many power management circuits. Its low gate threshold voltage allows for easy integration with microcontroller and logic-level devices. The PowerPAK® SO-8 package provides excellent thermal performance, enabling the device to handle higher power levels. The MOSFET's fast switching speed minimizes switching losses, contributing to overall system efficiency. The device is lead-free and halogen-free, compliant with environmental regulations. Its ability to switch loads efficiently makes it well-suited for power management in portable electronics, DC-DC converters, and other battery-powered systems. The 100% Rg tested characteristic provides added confidence in the device's consistent and reliable performance. This MOSFET provides a good balance of efficiency, switching speed, and thermal performance in a compact package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.2120 $50.8760
56+ $1.8150 $101.6400
86+ $1.7583 $151.2138
118+ $1.7015 $200.7770
152+ $1.6448 $250.0096
204+ $1.4747 $300.8388
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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