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SQJ416EP-T1_GE3

Part No SQJ416EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 27A PPAK SO-8  /  N-Channel 100 V 27A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 30mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 25 V
Power Dissipation (Max) 45W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SQJ416
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SQJ416EP-T1_GE3CT,SQJ416EP-T1_GE3DKR,SQJ416EP-T1_GE3TR
Standard Package 3,000
Win Source Part Number 1111506-SQJ416EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJ416EP-T1_GE3 CAD Model

Description

The Vishay Siliconix SQJ416EP-T1_GE3 is an N-channel MOSFET transistor that is commonly used in electronic circuits that require high power switching and manufactured by Vishay Siliconix.

  • Category: Discrete Semiconductor Products
  • Application: Automotive
  • Maximum Drain to Source Voltage: 100 volts
  • Supply and Demand Status: Balanced
  • Maximum Power Dissipation: 45 watts
  • Gate Charge: 20 nanocoulombs

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8307 $53.9955
150+ $0.6816 $102.2400
230+ $0.6603 $151.8690
315+ $0.6390 $201.2850
405+ $0.6177 $250.1685
545+ $0.5538 $301.8210
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,889 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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