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Same model may have multiple batches, images only for reference.
SQJQ410EL-T1_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQJQ410EL-T1_GE3

Part No SQJQ410EL-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 135A PPAK 8 X 8  /  N-Channel 100 V 135A (Tc) 136W (Tc) Surface Mount PowerPAK® 8 x 8
Datasheet
SQJQ410EL-T1_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 135A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7350 pF @ 25 V
Power Dissipation (Max) 136W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 8 x 8
Package / Case PowerPAK® 8 x 8
Base Product Number SQJQ410
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SQJQ410EL-T1_GE3CT,SQJQ410EL-T1_GE3DKR,SQJQ410EL-T1_GE3TR
Standard Package 2,000
Win Source Part Number 1095814-SQJQ410EL-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJQ410EL-T1_GE3 CAD Model

Description

The SQJQ410EL-T1_GE3 is an N-channel MOSFET from Vishay Siliconix.

  • Application: Automotive
  • Series: TrenchFET
  • Drain to Source Voltage: 100V
  • Continuous Drain Current: 135A
  • Rds On: 3.4mOhm @ 20A, 10V
  • Gate Charge: 150 nC @ 10V
  • Input Capacitance: 7350 pF @ 25V
  • Package: PowerPAK® 8 x 8
  • Packaging: Tape and Reel

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36+ $2.7827 $100.1772
56+ $2.6957 $150.9592
77+ $2.6087 $200.8699
100+ $2.5218 $252.1800
133+ $2.2609 $300.6997
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