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SQJQ906EL-T1_GE3

Part No SQJQ906EL-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 160A (Tc)
Rds On (Max) @ Id, Vgs 4.3mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3238pF @ 20V
Power - Max 187W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case PowerPAK® 8 x 8 Dual
Supplier Device Package PowerPAK® 8 x 8 Dual
Base Product Number SQJQ906
Other Names SQJQ906EL-T1_GE3CT,SQJQ906EL-T1_GE3DKR,SQJQ906EL-T1_GE3TR
Standard Package 2,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278523-SQJQ906EL-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJQ906EL-T1_GE3 CAD Model

Description

The SQJQ906EL-T1_GE3 is a 2 N-Channel Dual FET with a standard feature.

  • Drain to Source Voltage: 40V
  • Continuous Drain: 160A @ 25°C
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 5A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3238pF @ 20V
  • Package: PowerPAK® 8 x 8 Dual
  • Temperature Range: -55°C ~ 175°C (TJ)
  • Series: Automotive, AEC-Q101, TrenchFET® series
  • Applications: Transistors - FETs, MOSFETs - Arrays

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9727 $59.1810
75+ $1.6186 $121.3950
115+ $1.5680 $180.3200
155+ $1.5174 $235.1970
200+ $1.4669 $293.3800
265+ $1.3151 $348.5015
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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