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Same model may have multiple batches, images only for reference.
SQM200N04-1M1L_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQM200N04-1M1L_GE3

Part No SQM200N04-1M1L_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SQM200N04-1M1L_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 413 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 20655 pF @ 25 V
Power Dissipation (Max) 375W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-263-7
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Base Product Number SQM200
Other Names SQM200N04-1M1L-GE3,SQM200N04-1M1L_GE3DKR,SQM200N04-1M1L_GE3,SQM200N04-1M1L_GE3CT,SQM200N04-1M1L_GE3TR,SQM200N04-1M1L-GE3
Standard Package 800
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277606-SQM200N04-1M1L_GE3
Ultra Librarian 3D Model Ultra Librarian SQM200N04-1M1L_GE3 CAD Model

Description

The Vishay SQM200N04-1M1L_GE3 is an N-channel MOSFET with a drain to source voltage of 40V.

  • Continuous Drain Current: 200A
  • Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Power Dissipation: 375W (Tc)
  • Package: TO-263-7, D²Pak (6 Leads + Tab)
  • Usage: various electronic circuits

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