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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.35mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 450 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 28000 pF @ 15 V
Power Dissipation (Max) 375W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SQM30010
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SQM30010EL_GE3DKR,SQM30010EL_GE3TR,SQM30010EL_GE3CT
Standard Package 800
Win Source Part Number 1086805-SQM30010EL_GE3
Ultra Librarian 3D Model Ultra Librarian SQM30010EL_GE3 CAD Model

Description

The SQM30010EL_GE3 is an N-channel MOSFET designed for high power switching applications.

  • Drain-Source Voltage: 30V
  • Continuous Drain Current: 120A @ 25°C
  • Maximum On-Resistance: 1.35mOhm @ 40A and 10V gate-source voltage
  • Gate Threshold Voltage: 2.5V @ 250μA
  • Gate Charge: 450nC @ 10V
  • Package: TO-263-3
  • Mounting: Surface mount
  • Series: TrenchFET
  • Manufacturer: Vishay Siliconix

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