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Same model may have multiple batches, images only for reference.
SQS407ENW-T1_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQS407ENW-T1_GE3

Part No SQS407ENW-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 16A PPAK1212-8W / P-Channel 30 V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK? 1212-8W
Datasheet
SQS407ENW-T1_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.8mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 77 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4572 pF @ 20 V
Power Dissipation (Max) 62.5W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8W
Package / Case PowerPAK® 1212-8W
Base Product Number SQS407
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 849567-SQS407ENW-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQS407ENW-T1_GE3 CAD Model

Description

The SQS407ENW-T1_GE3 is a P-channel MOSFET from Vishay and belongs to the TrenchFET series.

  • Application: Automotive
  • Drain-to-Source Voltage: 30V
  • Continuous Drain Current: 16A
  • On-Resistance: 10.8mOhm @ 12A and 10V
  • Gate Charge: 77nC @ 10V
  • Temperature Range: -55°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6842 $58.1570
210+ $0.5615 $117.9150
320+ $0.5439 $174.0480
440+ $0.5264 $231.6160
570+ $0.5089 $290.0730
760+ $0.4562 $346.7120
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Availability: 1,040 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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