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Same model may have multiple batches, images only for reference.
SUD50N04-05L-E3 Vishay
Same model may have multiple batches, images only for reference.

SUD50N04-05L-E3

Part No SUD50N04-05L-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 115A TO252
Datasheet
SUD50N04-05L-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 115A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 135nC @ 10V
Max Input Capacitance 5600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 5.4 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 057005-SUD50N04-05L-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUD50N04-05L-E3 CAD Model

Description

The SUD50N04-05L-E3 is an N-channel MOSFET manufactured by Vishay.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 115A @ 25°C
  • Maximum Power Dissipation: 136W
  • Operating Temperature Range: -55°C to 175°C
  • Maximum Rds On: 5.4 mOhm @ 20A, 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Package: TO-252, (D-Pak) package
  • ECCN: EAR99
  • REACH: unaffected

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