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Same model may have multiple batches, images only for reference.
SUP75P03-07-E3 Vishay
Same model may have multiple batches, images only for reference.

SUP75P03-07-E3

Part No SUP75P03-07-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 75A TO220AB
Datasheet
SUP75P03-07-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 240nC @ 10V
Max Input Capacitance 9000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.75W (Ta), 187W (Tc)
Maximum Rds On at Id,Vgs 7 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1104135-SUP75P03-07-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SUP75P03-07-E3 CAD Model

Description

The Vishay SUP75P03-07-E3 is a P-channel MOSFET that is part of the Discrete Semiconductor Products category.

  • Channel Type: P-Channel
  • Category: Discrete Semiconductor Products
  • Supply and Demand: Sufficient
  • Maximum Power Dissipation: 3.75W (Ta), 187W (Tc)
  • Mounting Type: Through-Hole
  • Package: TO-220AB
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 75A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA

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