The SUV85N03 is an N-Channel MOSFET from Vishay Siliconix, designed for high-efficiency power switching applications. This MOSFET leverages advanced trench technology to minimize on-state resistance (Rds(on)) while optimizing gate charge, resulting in superior switching performance and reduced power losses. Its robust design ensures reliability and suitability for demanding environments.

Applications

• Synchronous rectification in DC-DC converters
• Primary side switching in AC-DC adapters
• Motor control applications
• Load switching
• Battery management systems

Features

• Low on-state resistance (Rds(on))
• Low gate charge (Qg)
• Fast switching speed
• Avalanche rated
• TrenchFET® Power MOSFET technology
• Lead (Pb)-free and RoHS compliant

Benefits

• Improved energy efficiency due to reduced power losses
• Higher power density in applications
• Simplified thermal management due to lower operating temperatures
• Enhanced system reliability
• Environmentally friendly due to RoHS compliance

Additional Details

The SUV85N03 is typically available in a PowerPAK® SO-8 package. Key specifications include a drain-source voltage (Vds) of 30V, continuous drain current (Id) of up to 30A (depending on operating conditions and package limitations), and a maximum Rds(on) of around 8.5 mΩ at a gate-source voltage (Vgs) of 10V. The gate threshold voltage (Vgs(th)) is typically between 1V and 3V. The device's thermal resistance is low, allowing for efficient heat dissipation. This MOSFET is well-suited for applications where minimizing power loss and maximizing efficiency are critical design considerations.