The PMV65UN is a N-channel enhancement mode Field-Effect Transistor (FET) produced by ZP Semiconductor using Trench MOSFET technology. This device is designed to provide high efficiency and low on-state resistance (RDS(on)) in a small SOT-23 (TO-236AB) package. It is suitable for various applications, including load switching, DC-DC converters, and power management circuits.

Applications:

• Load switch
• DC-DC conversion
• Power management
• Portable devices
• Battery management systems

Features:

• Trench MOSFET technology
• Low on-state resistance (RDS(on))
• Small SOT-23 package
• Logic level gate drive
• Fast switching speed

Benefits:

• High Efficiency: Low RDS(on) minimizes power losses, improving overall efficiency.
• Compact Design: SOT-23 package allows for high-density circuit design.
• Logic Level Compatibility: Gate threshold voltage is compatible with logic-level signals, simplifying circuit design.
• Fast Switching: Enables high-frequency operation in switching applications.
• Reduced Heat Dissipation: Lower RDS(on) contributes to less heat generation.

The PMV65UN's trench MOSFET structure ensures low on-state resistance, reducing conduction losses and enhancing efficiency. Its gate-source threshold voltage (VGS(th)) is tailored for logic-level gate drive, simplifying interfacing with microcontrollers and other logic devices. The device is designed to withstand a specified drain-source voltage (VDS) and gate-source voltage (VGS), ensuring reliable operation within its intended application range.

The SOT-23 package is ideal for space-constrained applications, enabling high-density component placement on printed circuit boards. The PMV65UN is Pb-free and RoHS compliant, adhering to environmental standards.

Technical Specifications (Typical):

• VDS (Drain-Source Voltage): 30V
• VGS (Gate-Source Voltage): ±20V
• ID (Continuous Drain Current): 2.9A (depending on mounting conditions)
• RDS(on) (On-State Resistance): 68 mΩ at VGS = 4.5V
• RDS(on) (On-State Resistance): 105 mΩ at VGS = 2.5V
• PD (Power Dissipation): 0.83W (depending on mounting conditions)