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Same model may have multiple batches, images only for reference.
AMTP65H150G4PS Advanced Power Electronics Corp. – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

AMTP65H150G4PS

Part No AMTP65H150G4PS
Manufacturer Advanced Power Electronics Corp.
Catalog FETs - Single
Description GAN FET N-CH 650V TO-220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Package Tube
Product Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 6 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 598 pF @ 400 V
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Ultra Librarian 3D Model Ultra Librarian AMTP65H150G4PS CAD Model

Description

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