The AP05N50EH is a 500V, 5A N-Channel power MOSFET from Advanced Power Electronics Corp. This MOSFET is designed for applications requiring high voltage and efficient switching, such as power supplies, LED lighting, and DC-DC converters. It features a low on-resistance and gate charge, contributing to improved efficiency and reduced power losses.

Applications:

• Power Supplies (SMPS)
• LED Lighting
• DC-DC Converters
• Adapters
• Electronic Ballasts

Features:

• High Voltage: 500V Drain-Source Voltage (Vds)
• Low On-Resistance: Reduces conduction losses and improves efficiency.
• Fast Switching Speed: Minimizes switching losses.
• Low Gate Charge: Enhances switching performance.
• Avalanche Energy Rated: Robust performance under transient conditions.
• Pb-Free Lead Plating: Compliant with environmental standards.

Benefits:

• High Efficiency: Low RDS(on) and Qg contribute to high efficiency in power conversion applications.
• Reliable Performance: Avalanche rating ensures robustness and reliability.
• Simplified Design: Fast switching characteristics simplify design efforts.
• Compact Solution: Suitable for applications where space is limited.
• Environmentally Friendly: Pb-free design meets environmental requirements.

Technical Specifications:

The AP05N50EH has a drain-source voltage (Vds) of 500V, a continuous drain current (Id) of 5A, and a pulsed drain current (Idm) of 15A. The gate-source voltage (Vgs) is ±30V. The typical on-resistance (RDS(on)) is 1.2 Ohms at Vgs = 10V. The device is available in a TO-251 or TO-252 package. The operating junction temperature range is from -55°C to +150°C. The typical gate charge (Qg) is 10 nC.

The AP05N50EH is designed for optimized performance in demanding power applications. Its high voltage rating, low on-resistance, and fast switching capabilities make it an excellent choice for designers seeking efficient and reliable power solutions.