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Same model may have multiple batches, images only for reference.
AO4447 Real Image
Same model may have multiple batches, images only for reference.

AO4447

Part No AO4447
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog FETs - Single
Description P-Channel Enhancement Mode Field Effect Transistor | MOSFET P-CH 30V 15A 8SOIC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 15A
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Maximum) at Id, Vgs 7.5mOhm at 15A, 10V
Gate Source Voltage(th) (Maximum) at Id 1.6V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 120nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 6600pF at 15V
Power Dissipation (Maximum) 3.1W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-SOIC
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1144771-AO4447
Manufacturer Homepage www.aosmd.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AO4447 CAD Model

Description

The AO4447 MOSFET from Alpha & Omega Semiconductor Inc. is a P-Channel transistor with a drain-source breakdown voltage of 30V and a continuous drain current of 15A.

  • Channel Type: P-Channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 15A
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Voltage Threshold: 1.6V @ 250μA
  • Maximum Gate Charge: 120nC @ 10V
  • Maximum Input Capacitance: 6600pF @ 15V
  • Maximum Rds On: 7.5mOhm @ 15A, 10V
  • Power Dissipation: 3.1W
  • Package: 8-SOIC

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95+ $0.6255 $59.4225
230+ $0.5133 $118.0590
350+ $0.4973 $174.0550
480+ $0.4813 $231.0240
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835+ $0.4171 $348.2785
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