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Same model may have multiple batches, images only for reference.
AOD2C60 Real Image
Same model may have multiple batches, images only for reference.

AOD2C60

Part No AOD2C60
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 2A
Datasheet
AOD2C60 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 10nC @ 10V
Max Input Capacitance 304pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 52W (Tc)
Maximum Rds On at Id,Vgs 3.3 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1016914-AOD2C60
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AOD2C60 CAD Model

Description

The AOD2C60 is an N-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc.

  • Packaging: Reel
  • Mounting: SMD (SMT)
  • Supply and Demand: Sufficient
  • Popularity: Medium
  • Status: Obsolete (EOL)
  • Power Dissipation: 52W (Tc)
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 600V
  • Maximum Rds on at Id,Vgs: 3.3 Ohm @ 500mA, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 10nC @ 10V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Input Capacitance: 304pF @ 100V
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: TO-252, (D-Pak)
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63

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