The MOSFET is a high-performance N-channel device manufactured by Alpha & Omega Semiconductor Inc. with a drain-source breakdown voltage of 30V and a continuous drain current of 39A (Ta), 85A (Tc) @ 25°C.

• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current: 39A (Ta), 85A (Tc) @ 25°C
• Applications: Discrete semiconductor products
• Package: 8-DFN (5x6)
• Maximum Power Dissipation: 6.2W (Ta), 42W (Tc)
• Maximum Rds On: 2.8 mOhm @ 20A, 10V
• Gate-Source Threshold Voltage: 1.9V @ 250μA
• Maximum Gate Charge: 37.5nC @ 10V
• Supply and Demand Status: Balanced