The Alpha & Omega Semiconductor Inc. MOSFET (Metal Oxide) N-Channel FET Type is a high-performance electronic component.

• Drain to Source Voltage (Vdss): 30V
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Operating Temperature Range: -55°C ~ 150°C
• Package: 8-DFN-EP (3.3x3.3)
• Power Dissipation (Maximum): 83W (Tc)
• Status: Obsolete (End Of Life)
• Popularity: Medium
• Supply and Demand Status: Balance
• Manufacturer Pack Quantity: 3,000
• MSL Level: 1 (Unlimited)
• Rds On (Maximum) @ Id, Vgs: 1.7mOhm @ 20A, 10V
• Gate Charge (Qg) (Maximum) @ Vgs: 65nC @ 10V
• Input Capacitance (Ciss) (Maximum) @ Vds: 2994pF @ 15V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Vgs(th) (Maximum) @ Id: 2.2V @ 250μA
• Maximum Vgs: ±20V