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AOT29S50L

Part No AOT29S50L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 29A TO220
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 250μA
Max Gate Charge 26.6nC @ 10V
Max Input Capacitance 1312pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 357W (Tc)
Maximum Rds On at Id,Vgs 150 mOhm @ 14.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1017211-AOT29S50L
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian AOT29S50L CAD Model

Description

The AOT29S50L is an N-channel MOSFET electronic component with a TO-220 case/package from Alpha & Omega Semiconductor Inc.

  • Package: TO-220
  • Power Dissipation: 357W (Tc)
  • Continuous Drain Current: 29A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3.9V @ 250μA
  • Gate Charge (Max): 26.6nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.2757 $59.8598
33+ $3.5084 $115.7772
51+ $3.3987 $173.3337
71+ $3.2891 $233.5261
91+ $3.1794 $289.3254
122+ $2.8505 $347.7610
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 29,100 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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