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Same model may have multiple batches, images only for reference.
AOT3N100 Real Image
Same model may have multiple batches, images only for reference.

AOT3N100

Part No AOT3N100
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 2.8A TO220
Datasheet
AOT3N100 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V
Continuous Drain Current at 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 830pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 132W (Tc)
Maximum Rds On at Id,Vgs 6 Ohm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1017213-AOT3N100
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AOT3N100 CAD Model

Description

The AOT3N100 is a through-hole mounting N-channel MOSFET from Alpha & Omega Semiconductor Inc.

  • Mounting: through-hole
  • Drain-Source Breakdown Voltage: 1000V
  • Continuous Drain Current: 2.8A
  • Status: active
  • Popularity: medium
  • Operating Temperature Range: -55°C to 150°C
  • Maximum Rds On: 6 Ohm @ 1.5A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7398 $51.7860
165+ $0.6071 $100.1715
260+ $0.5881 $152.9060
355+ $0.5691 $202.0305
455+ $0.5502 $250.3410
610+ $0.4932 $300.8520
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Availability: 7,000 pieces
MOQ: 70 pcs
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