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AOT4N60 Real Image1 AOT4N60 Real Image2
Same model may have multiple batches, images only for reference.
AOT4N60 Real Image1 AOT4N60 Real Image2
AOT4N60 Real Image1 AOT4N60 Real Image2
Same model may have multiple batches, images only for reference.

AOT4N60

Part No AOT4N60
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4A TO-220
Datasheet
AOT4N60 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 615pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 104W (Tc)
Maximum Rds On at Id,Vgs 2.2 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1017224-AOT4N60
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AOT4N60 CAD Model

Description

The Alpha & Omega Semiconductor Inc. MOSFET is a high-performance N-channel power MOSFET designed for use in discrete semiconductor products.

  • Power Dissipation: 104W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 4A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Rds On: 2.2 Ohm @ 2A, 10V
  • Package: TO-220-3
  • Mounting Technology: Through-Hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5720 $60.0600
250+ $0.4694 $117.3500
385+ $0.4548 $175.0980
525+ $0.4401 $231.0525
680+ $0.4254 $289.2720
910+ $0.3814 $347.0740
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Availability: 34,000 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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