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Same model may have multiple batches, images only for reference.
AOTF10B65M2 Real Image
Same model may have multiple batches, images only for reference.

AOTF10B65M2

Part No AOTF10B65M2
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog IGBTs - Single
Description IGBT 650V 10A TO220 / High short-circuit ruggedness
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube
Voltage - Collector Emitter Breakdown (Maximum) 650V
Current - Collector (Ic) (Maximum) 20A
Current - Collector Pulsed (Icm) 30A
Vce(on) (Maximum) at Vge, Ic 2V at 15V, 10A
Power - Max 30W
Switching Energy 180μJ (on), 130μJ (off)
Input Type Standard
Gate Charge 24nC
Td (on/off) at 25°C 12ns/91ns
Test Condition 400V, 10A, 30Ohm, 15V
Reverse Recovery Time (trr) 262ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-220-3
Supplier Device Package TO-220
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 804581-AOTF10B65M2
Ultra Librarian 3D Model Ultra Librarian AOTF10B65M2 CAD Model

Description

The Alpha & Omega Semiconductor Inc. AOTF10B65M2 is a through-hole mounted IGBT transistor with a maximum power rating of 30W.

  • Reverse Recovery Time (trr): 262ns
  • Current Collector Pulsed (Icm): 30A
  • Switching Energy: 180μJ (on) and 130μJ (off)
  • Gate Charge: 24nC
  • Input Type: Standard
  • Collector-Emitter Breakdown Voltage: 650V
  • Maximum Collector Current: 20A
  • Vce(on) (Maximum) @ Vge, Ic: 2V @ 15V, 10A
  • Temperature Range: -55°C to 150°C
  • Package: TO-220-3

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Quantity Unit Price Ext. Price
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180+ $0.5687 $102.3660
275+ $0.5510 $151.5250
380+ $0.5332 $202.6160
490+ $0.5154 $252.5460
650+ $0.4621 $300.3650
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Availability: 4,000 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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