AOTF10B65M2

Part No AOTF10B65M2
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog IGBTs - Single
Description IGBT 650V 10A TO220 / High short-circuit ruggedness
Sample
Rohs State rohs
ECAD Module
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Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube
Voltage - Collector Emitter Breakdown (Maximum) 650V
Current - Collector (Ic) (Maximum) 20A
Current - Collector Pulsed (Icm) 30A
Vce(on) (Maximum) at Vge, Ic 2V at 15V, 10A
Power - Max 30W
Switching Energy 180μJ (on), 130μJ (off)
Input Type Standard
Gate Charge 24nC
Td (on/off) at 25°C 12ns/91ns
Test Condition 400V, 10A, 30Ohm, 15V
Reverse Recovery Time (trr) 262ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-220-3
Supplier Device Package TO-220
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 804581-AOTF10B65M2
Ultra Librarian 3D Model   Symbol, Footprint, 3D Model

Description

The Alpha & Omega Semiconductor Inc. AOTF10B65M2 is a through-hole mounted IGBT transistor with a maximum power rating of 30W. It has a reverse recovery time (trr) of 262ns and a current collector pulsed (Icm) rating of 30A. The switching energy of this transistor is 180μJ (on) and 130μJ (off) with a gate charge of 24nC. The device is designed for standard input type and has a voltage collector-emitter breakdown of 650V. The device has a maximum collector current of 20A and a Vce(on) (Maximum) at Vge, Ic of 2V at 15V, 10A. The device has a temperature range of -55°C to 150°C and is packaged in a TO-220-3. The AOTF10B65M2 is suitable for use in industrial power management applications.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
45+ $1.1924 $53.6580
105+ $0.9784 $102.7320
160+ $0.9479 $151.6640
220+ $0.9173 $201.8060
285+ $0.8867 $252.7095
380+ $0.7950 $302.1000
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 4,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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