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Same model may have multiple batches, images only for reference.
AOTF9N70L
Same model may have multiple batches, images only for reference.

AOTF9N70L

Part No AOTF9N70L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET
Sample
Rohs State Need to verify
ECAD Module
Need Help

Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Alpha & Omega Semiconductor Inc.
Series -
Package Bulk
Product Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1630 pF @ 25 V
FET Feature -
Power Dissipation (Max) 27.8W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F
Package / Case TO-220-3 Full Pack
Base Product Number AOTF9
REACH Status REACH Unaffected
Win Source Part Number 1377827-AOTF9N70L
Ultra Librarian 3D Model Ultra Librarian AOTF9N70L CAD Model

Description

The AOTF9N70L is a N-channel MOSFET transistor from Alpha & Omega Semiconductor Inc.

  • Series: aMOS™
  • Package: TO-220-3 Full Pack
  • Drain to Source Voltage (Vdss): 700V
  • Continuous Drain Current (Id): 9A
  • On-Resistance (Rds On): 1.2Ohm
  • Gate Threshold Voltage (Vgs(th)): 4.5V
  • Gate Charge (Qg): 35nC
  • Power Dissipation: 27.8W
  • Operating Temperature: -55°C to 150°C
  • REACH: Unaffected
  • Status: Last Time Buy

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