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AOW298

Part No AOW298
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 9A TO262
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 9A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.1V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 1670pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.1W (Ta), 100W (Tc)
Maximum Rds On at Id,Vgs 14.5 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1017315-AOW298
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AOW298 CAD Model

Description

The Alpha & Omega Semiconductor Inc. AOW298 is a N-Channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 9A (Ta), 58A (Tc) @ 25°C
  • Maximum Rds On @ Id,Vgs: 14.5 mOhm @ 20A, 10V
  • Package: TO-262
  • Dimensions: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4.1V @ 250μA
  • Supply and Demand Status: Balance

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