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Same model may have multiple batches, images only for reference.
AOWF14N50 Alpha & Omega Semiconductor Inc.
Same model may have multiple batches, images only for reference.

AOWF14N50

Part No AOWF14N50
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 14A TO262F
Datasheet
AOWF14N50 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 51nC @ 10V
Max Input Capacitance 2297pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 28W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1017329-AOWF14N50
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AOWF14N50 CAD Model

Description

The AOWF14N50 is an N-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc.

  • Maximum Power Dissipation: 28W (Tc)
  • Continuous Drain Current: 14A (Tc) @ 25°C
  • Supply and Demand Status: Balanced
  • Win Source Part Number: 1017329-AOWF14N50
  • Package Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Drain-Source Breakdown Voltage: 500V
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Rds On @ Id,Vgs: 380 mOhm @ 7A, 10V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Gate Charge: 51nC @ 10V
  • Maximum Input Capacitance: 2297pF @ 25V
  • Drive Voltage: 10V
  • Operating Temperature: -55°C to 150°C (TJ)

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95+ $1.2797 $121.5715
140+ $1.2393 $173.5020
195+ $1.1989 $233.7855
250+ $1.1596 $289.9000
335+ $1.0395 $348.2325
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